A strained organic field-effect transistor with a gate-tunable superconducting channel
A strained organic field-effect transistor with a gate-tunable superconducting channel
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DOI：
10.1038/ncomms3379
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发表时间：
2013-08
影响因子：
16.6
通讯作者：
H. Yamamoto;M. Nakano;M. Suda;Y. Iwasa;M. Kawasaki;R. Kato
中科院分区：
文献类型：
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作者：
H. Yamamoto;M. Nakano;M. Suda;Y. Iwasa;M. Kawasaki;R. Kato
在现有技术的硅器件中，载流子的迁移率通过来自后衬底的晶格应变而增强。这种对器件性能的额外控制在实现高性能计算方面具有重要意义，并且对于电场感应超导（SC）器件也应该是有效的。然而，到目前为止，载流子密度是场致SC界面的唯一参数。在这里，我们展示了一个有源有机SC场效应晶体管，其晶格由来自衬底的应变调制。软有机晶格允许通过选择背衬底来调谐应变，以使诱导的SC状态在低温下可与顺电固体栅极接触。这样实现的有源三端约瑟夫森结器件在高级计算和阐明相关材料中填充控制和带宽控制SC相之间的直接联系方面都是有用的。
In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high-performance computing and should be valid for electric-field-induced superconducting (SC) devices, too. However, so far, the carrier density is the sole parameter for field-induced SC interfaces. Here we show an active organic SC field-effect transistor whose lattice is modulated by the strain from the substrate. The soft organic lattice allows tuning of the strain by a choice of the back substrate to make an induced SC state accessible at low temperature with a paraelectric solid gate. An active three-terminal Josephson junction device thus realized is useful both in advanced computing and in elucidating a direct connection between filling-controlled and bandwidth-controlled SC phases in correlated materials.