Ultra-small, self-holding, optical gate switch using Ge2Sb2Te5 with a multi-mode Si waveguide.
Ultra-small, self-holding, optical gate switch using Ge2Sb2Te5 with a multi-mode Si waveguide.
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DOI：
10.1364/oe.20.010283
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发表时间：
2012-04
期刊：
影响因子：
3.8
通讯作者：
D. Tanaka;Y. Shoji;M. Kuwahara;Xiaomin Wang;K. Kintaka;H. Kawashima;T. Toyosaki;Y. Ikuma;H. Tsuda
中科院分区：
文献类型：
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作者：
D. Tanaka;Y. Shoji;M. Kuwahara;Xiaomin Wang;K. Kintaka;H. Kawashima;T. Toyosaki;Y. Ikuma;H. Tsuda
报道了一种基于多模干涉的光闸开关，它采用Ge（2）Sb（2）Te（5）薄膜，薄膜直径仅为1 μm。通过激光脉冲辐照实验验证了开关的工作特性。该开关在1575 nm附近具有100 nm的非常宽的工作波长范围，平均消光比为12.6 dB。重复开关超过2,000次辐照循环也被成功证明。此外，通过观察动态响应证实了自保持特性，上升和下降时间分别为130 ns和400 ns。
We report a multi-mode interference-based optical gate switch using a Ge(2)Sb(2)Te(5) thin film with a diameter of only 1 µm. The switching operation was demonstrated by laser pulse irradiation. This switch had a very wide operating wavelength range of 100 nm at around 1575 nm, with an average extinction ratio of 12.6 dB. Repetitive switching over 2,000 irradiation cycles was also successfully demonstrated. In addition, self-holding characteristics were confirmed by observing the dynamic responses, and the rise and fall times were 130 ns and 400 ns, respectively.