Elastic stabilization of a single-domain ferroelectric state in nanoscale capacitors and tunnel junctions.
Elastic stabilization of a single-domain ferroelectric state in nanoscale capacitors and tunnel junctions.
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DOI：
10.1103/physrevlett.98.257603
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发表时间：
2006-03
影响因子：
8.6
通讯作者：
N. Pertsev;H. Kohlstedt
中科院分区：
文献类型：
--
作者：
N. Pertsev;H. Kohlstedt
考虑到在铁电薄膜中的非均匀极化波动和晶格应变之间的电致伸缩耦合，我们表明，在异质结构涉及应变外延膜和金属电极，单畴状态可以保持稳定，对转换成多畴状态下降到纳米尺度。这一结果表明，具有相反反射极化的铁电态即使在纳米电容器和隧道结中也可以稳定，这为它们在存储器存储中的应用开辟了可能性。
Taking into account the electrostrictive coupling between inhomogeneous polarization fluctuations and lattice strains in ferroelectric films, we show that, in heterostructures involving strained epitaxial films and metal electrodes, the single-domain state may remain stable against the transformation into a polydomain state down to the nanometer scale. This result indicates that the ferroelectric states with opposite remanent polarizations can be stabilized even in nanoscale capacitors and tunnel junctions, which opens the possibility of their application for memory storage.