Reconstructions of the InP(111)A surface -: art. no. 085320
Reconstructions of the InP(111)A surface -: art. no. 085320
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DOI：
10.1103/physrevb.68.085320
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发表时间：
2003-08-15
影响因子：
3.7
通讯作者：
Hicks, RF
中科院分区：
文献类型：
--
作者：
Li, CH;Sun, Y;Hicks, RF
采用金属有机物气相外延法在InP（111）A衬底上沉积磷化铟。然后，通过扫描隧道显微镜，低能电子衍射和X射线光电子能谱的表面进行了表征。观察到两次重建：（2x2）和（root 3xroot 3）R30度，磷覆盖率分别为0.25和1.00+/-0.05 ML（单层）。发现（2x2）采用了铟空位结构，如在GaAs（111）A的（2x2）相上观察到的。（root 3xroot 3）R30度重构以前在III/V半导体表面上没有看到过。实验证据表明，该表面终止于完整的磷三聚体层。
Indium phosphide was deposited on InP(111)A substrates by metalorganic vapor-phase epitaxy. Then, the surface was characterized by scanning tunneling microscopy, low-energy electron diffraction, and x-ray photoelectron spectroscopy. Two reconstructions were observed: the (2x2) and the (root3xroot3)R30degrees with phosphorus coverages of 0.25 and 1.00+/-0.05 ML (monolayers), respectively. The (2x2) was found to adopt an indium-vacancy structure such as that observed on the (2x2) phase of GaAs (111)A. The (root3xroot3)R30degrees reconstruction has not been seen previously on III/V semiconductor surfaces. The experimental evidence suggests that this surface is terminated with a complete layer of phosphorus trimers.