Electrical characteristics of MILC poly-Si TFTs with long Ni-offset structure
Electrical characteristics of MILC poly-Si TFTs with long Ni-offset structure
复制标题
长Ni偏移结构MILC多晶硅TFT的电特性
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
S. Joo
中科院分区：
文献类型：
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作者：
G. Kim;Yeo‐geon Yoon;Min;Hunjoon Jung;Seok;S. Joo
我们观察到B/sub 2/H/sub 6/-掺杂非晶硅（a-Si）比未掺杂a-Si具有更快的金属诱导横向晶化（MILC）生长速率。从微观结构的分析，它被认为是硼原子可以帮助修改的生长行为，从一个分支的晶体网络的单向晶体生长与分支少，可以提高生长速率。通过在源极/漏极和沟道之间的边界区域使用这种良好的晶体结构，我们已经成功地制造了p型多晶硅薄膜晶体管与MILC工艺具有良好的电气性能。
We have observed that B/sub 2/H/sub 6/-doped amorphous silicon (a-Si) showed a faster growth rate of metal-induced lateral crystallization (MILC) than that of undoped a-Si. From the analysis of the microstructure, it was thought that boron atoms could help modify the growth behavior from that of a branched crystal network to unidirectional crystal growth with few branches and that growth rate could to be enhanced. By using this good crystalline structure at the boundary region between the source/drain and channel, we have successfully fabricated p-type poly-Si thin-film transistors with good electrical properties with a MILC process.