Microstructures of undercooled Si
Microstructures of undercooled Si
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过冷硅的微观结构
DOI：
10.1063/1.356458
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发表时间：
1994
影响因子：
3.2
通讯作者：
H. Kui
中科院分区：
文献类型：
--
作者：
K. Leung;H. Kui
熔融硅在5.7 ~ 157 K的初始整体过冷度ΔT下等温凝固。结果表明，除了211孪晶枝晶外，还发现了110孪晶和100孪晶自由枝晶。110孪晶枝晶具有多个孪晶面，孪晶面取向为{111}。这些不同的枝晶存在于不同的初始整体过冷度下，从110 ℃到211 ℃和211 ℃到100 ℃的枝晶转变温度分别为ΔT=22和68 K。从110 μ m到1211 μ m和1211 μ m到100 μ m的枝晶转变分别是沿边到沿边和沿边到连续正常生长。
Molten Si was allowed to solidify isothermally at initial bulk undercoolings ΔT from 5.7 to 157 K. It was found that in addition to the 〈211〉 twin dendrites two novel dendrites were found: the 〈110〉 twin and the 〈100〉 twin free dendrite. The 〈110〉 twin dendrite has multiple twin planes, and the orientation of the twin plane is {111}. These different dendrites exist at different initial bulk undercoolings, and the dendritic transition temperatures for 〈110〉 to 〈211〉 and 〈211〉 to 〈100〉 are ΔT=22 and 68 K, respectively. The dendritic transitions for 〈110〉 to 〈211〉 and 〈211〉 to 〈100〉 are edgewise to edgewise and edgewise to continuous normal growth, respectively.