Experimental study of mobility in [110]- and [100]-directed multiple silicon nanowire GAA MOSFETs on (100) SOI
Experimental study of mobility in [110]- and [100]-directed multiple silicon nanowire GAA MOSFETs on (100) SOI
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DOI：
10.1109/vlsit.2008.4588552
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发表时间：
2008-06
期刊：
影响因子：
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通讯作者：
Jiezhi Chen;T. Saraya;K. Miyaji;K. Shimizu;T. Hiramoto
中科院分区：
文献类型：
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作者：
Jiezhi Chen;T. Saraya;K. Miyaji;K. Shimizu;T. Hiramoto
报道了当纳米线宽度缩小至 10 nm 以下时，(100) SOI 上硅纳米线迁移特性的实验研究。通过先进的分割CV方法对50~1000纳米线进行准确的迁移率估计。首次研究了[100]定向纳米线中的电子和空穴迁移率，并与[110]纳米线进行了比较。结果表明，电子和空穴迁移率均单调降低，并且随着纳米线宽度的减小，[100]定向纳米线的电子迁移率往往与[110]定向纳米线的电子迁移率相当。
Experimental investigations of silicon nanowire mobility characteristics on (100) SOI as shrinking nanowire width to sub-10 nm are reported. Accurate mobility estimations by advanced split CV method for 50~1000 nanowires are performed. For the first time, electron and hole mobility in [100]-directed nanowires are studied and compared with [110] nanowires. It is shown that both electron and hole mobility decreases monotonically and electron mobility of [100]-directed nanowire tends to be comparable to that of [110]-directed nanowire as decreasing nanowire width.