Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy.
Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy.
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DOI：
10.1038/srep34474
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发表时间：
2016-09-29
影响因子：
4.6
通讯作者：
Novikov SV
中科院分区：
文献类型：
--
作者：
Cho YJ;Summerfield A;Davies A;Cheng TS;Smith EF;Mellor CJ;Khlobystov AN;Foxon CT;Eaves L;Beton PH;Novikov SV
我们展示了直接外延生长的高品质六方氮化硼（hBN）层的石墨使用高温等离子体辅助分子束外延。原子力显微镜揭示单层和少层岛生长，而进行原子力显微镜显示，生长的hBN具有随层数呈指数增加的电阻，并且具有与剥离的hBN相当的电性能。对hBN的X射线光电子能谱、拉曼显微镜和光谱椭圆偏振测量证实了sp2键合的hBN的形成和5.9 ± 0.1 eV的带隙，没有与石墨的化学互混。我们还观察到具有15 nm周期的六边形莫尔图案，与hBN晶格和石墨衬底的对齐一致。
We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN has a resistance which increases exponentially with the number of layers, and has electrical properties comparable to exfoliated hBN. X-ray photoelectron spectroscopy, Raman microscopy and spectroscopic ellipsometry measurements on hBN confirm the formation of sp2-bonded hBN and a band gap of 5.9 ± 0.1 eV with no chemical intermixing with graphite. We also observe hexagonal moiré patterns with a period of 15 nm, consistent with the alignment of the hBN lattice and the graphite substrate.