High-efficiency solar-thermophotovoltaic system equipped with a monolithic planar selective absorber/emitter

High-efficiency solar-thermophotovoltaic system equipped with a monolithic planar selective absorber/emitter
复制标题

DOI:
10.1117/1.jpe.5.053099
复制
发表时间:
2015
影响因子:
1.7
通讯作者:
M. Shimizu;A. Kohiyama;H. Yugami
M. Shimizu;A. Kohiyama;H. Yugami
中科院分区:
工程技术4区
文献类型:
--
作者:
M. Shimizu;A. Kohiyama;H. Yugami

文献摘要

被引文献

相似文献

抽象的。我们展示了一种使用单片、平面和光谱选择性吸收/发射器的高效太阳能-热光伏系统(STPV)。为了进行发电试验,设计并制造了一套完整的利用GaSb电池的STPV系统。为了生产高效率的STPV,将热辐射光谱与GaSb电池的敏感区域匹配是很重要的。因此,为了在较低的入射功率下达到较高的温度,采用了平面吸收/发射体来控制热辐射光谱。这种多层涂层是由夹有氧化钇稳定的氧化锆层的薄膜钨组成的。考虑到所制造的吸收/发射体的光学性质,系统效率估计为16%。利用高浓度太阳模拟器进行的发电测试表明,吸收/发射极温度在1640K处达到峰值,入射功率密度为45W/cm2,这是通过菲涅尔透镜等低成本光学元件很容易获得的。转换效率达到23%,超过了GaSb的Shockley-Queisser极限,禁带宽度为0.67 eV。此外,在发射体和电池之间的视场系数假定为1的情况下,系统的总效率为8%。
Abstract. We demonstrate a high-efficiency solar-thermophotovoltaic system (STPV) using a monolithic, planar, and spectrally selective absorber/emitter. A complete STPV system using gallium antimonide (GaSb) cells was designed and fabricated to conduct power generation tests. To produce a high-efficiency STPV, it is important to match the thermal radiation spectrum with the sensitive region of the GaSb cells. Therefore, to reach high temperatures with low incident power, a planar absorber/emitter is incorporated for controlling the thermal radiation spectrum. This multilayer coating consists of thin-film tungsten sandwiched by yttria-stabilized zirconia. The system efficiency is estimated to be 16% when accounting for the optical properties of the fabricated absorber/emitter. Power generation tests using a high-concentration solar simulator show that the absorber/emitter temperature peaks at 1640 K with an incident power density of 45 W/cm2, which can be easily obtained by low-cost optics such as Fresnel lenses. The conversion efficiency became 23%, exceeding the Shockley–Queisser limit for GaSb, with a bandgap of 0.67 eV. Furthermore, a total system efficiency of 8% was obtained with the view factor between the emitter and the cell assumed to be 1.