Optical pumping NMR in the compensated semiconductor InP:Fe
Optical pumping NMR in the compensated semiconductor InP:Fe
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DOI:
10.1103/physrevb.69.075215
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发表时间:
2003-12
影响因子:
3.7
通讯作者:
A. Goto;K. Hashi;T. Shimizu;R. Miyabe;Xiaogang Wen;S. Ohki;S. Machida;T. Iijima;G. Kido
中科院分区:
文献类型:
--
作者:
A. Goto;K. Hashi;T. Shimizu;R. Miyabe;Xiaogang Wen;S. Ohki;S. Machida;T. Iijima;G. Kido
The optical pumping nuclear-magnetic-resonance effect in the compensated semiconductor InP:Fe has been investigated in terms of the dependences of photon energy E p , helicity σ ′ , and exposure time τ L of infrared lights.The 3 1 P and 1 5 In signal enhancements show large σ ′ asymmetries and anomalous oscillations as a function of E p . We find that (i) the oscillation period as a function of E p is similar for 3 1 P and 1 1 5 In and almost field independent in spite of significant reduction of the enhancement in higher fields. (ii) A characteristic time for buildup of the 3 1 P polarization under the light exposure shows strong E p dependence, but is almost independent of σ ′ . (iii) The buildup times for 3 1 P and 1 1 5 In are of the same order (10 3 s), although the spin-lattice relaxation times T 1 are different by more than three orders of magnitude between them. The results are discussed in terms of (1) discrete energy spectra due to donor-acceptor pairs in compensated semiconductors and (2) interplay between 3 1 P and dipolar ordered indium nuclei, which are optically induced.