Fabrication and optical characterization of GaN-based nanopillar light emitting diodes
Fabrication and optical characterization of GaN-based nanopillar light emitting diodes
复制标题
GaN基纳米柱发光二极管的制造和光学表征
DOI：
10.1088/0256-307x/25/9/105
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发表时间：
2008-09-01
影响因子：
3.5
通讯作者：
Yang Hui
中科院分区：
文献类型：
--
作者：
Zhu Ji-Hong;Zhang Shu-Ming;Yang Hui
InGaN/GaN-multiple-quantum-well-based light emitting diode ( LED) nanopillar arrays with a diameter of approximately 200nm and a height of 700nm are fabricated by inductively coupled plasma etching using Ni self-assembled nanodots as etching mask. In comparison to the as-grown LED sample an enhancement by a factor of four of photoluminescence ( PL) intensity is achieved after the fabrication of nanopillars, and a blue shift and a decrease of full width at half maximum of the PL peak are observed. The method of additional wet etching with different chemical solutions is used to remove the etch-induced damage. The result shows that the dilute HCl ( HCl:H2O=1:1) treatment is the most effective. The PL intensity of nanopillar LEDs after such a treatment is about 3.5 times stronger than that before treatment.
