Wafer‐Scale Van der Waals Assembly of Free‐Standing Near Atom Thickness Hetero‐Membranes for Flexible Photo‐Detectors
Wafer‐Scale Van der Waals Assembly of Free‐Standing Near Atom Thickness Hetero‐Membranes for Flexible Photo‐Detectors
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DOI：
10.1002/aelm.202100395
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发表时间：
2021-06
影响因子：
6.2
通讯作者：
M. S. Shawkat;S. Han;Hee-Suk Chung;S. A. Mofid;Changhyeon Yoo;Yeonwoong Jung
中科院分区：
文献类型：
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作者：
M. S. Shawkat;S. Han;Hee-Suk Chung;S. A. Mofid;Changhyeon Yoo;Yeonwoong Jung
已经探索了功能和化学上不同的材料的不同集成，以开发用于光电子器件应用的有前途的构建块。最近，近原子厚度材料的范德华(VDW)组装提供了超越以往难以实现的极好机会。然而，它的最新演示仍然远远没有达到实际设备应用所需的可扩展性和多功能性，也就是说，集成通常是用横向尺寸非常小的内在分层2D材料演示的。本文报道了两种结构、化学和功能性质不同的材料的大厘米级VDW组装，即二维二碲化铂(PtTe2)金属多层膜和非层状三维半导体硫化铂(PTS)。这两种材料都被精确地从水中的生长晶片中剥离，随后被集成到具有所需功能的非传统衬底上。在柔性衬底上大面积VDW组装的2D/3DPtTe2/PTS异质结材料在可见光到近红外(NIR)的光谱范围内表现出良好的光检测性能，并且在严重的机械变形下保持良好的性能。这项研究为探索完全基于近原子厚度材料的大面积柔性光电器件铺平了道路。
Heterogeneous integrations of functionally and chemically distinct materials have been explored to develop promising building blocks for opto‐electronic device applications. Recently, the Van der Waals (vdW)‐assembly of near atom thickness materials has provided excellent opportunities beyond what has been previously been difficult to realize. However, its up‐to‐date demonstrations remain far from achieving the scalability and versatility demanded for practical device applications, that is, the integration is generally demonstrated with intrinsically layered 2D materials of very small lateral dimensions. Herein, the large centimeter‐scale vdW assembly of two different materials with structurally, chemically, and functionally distinct properties, that is, 2D platinum ditelluride (PtTe2) metallic multilayers and non‐layered 3D semiconducting platinum sulfide (PtS) are reported. Both materials are precisely delaminated from their growth wafers inside water and are subsequently integrated on unconventional substrates of desired functionalities. The large‐area vdW‐assembled 2D/3D PtTe2/PtS hetero‐materials on flexible substrates exhibit an excellent photodetection in a spectral range of visible‐to‐near infrared (NIR) wavelength, which is well preserved under severe mechanical deformation. This study paves the way for exploring large‐area flexible opto‐electronic devices solely based on near atom thickness materials.