Large-size β-Ga2O3 single crystals and wafers
Large-size β-Ga2O3 single crystals and wafers
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DOI：
10.1016/j.jcrysgro.2004.06.027
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发表时间：
2004-10-01
影响因子：
1.8
通讯作者：
Ichinose, N
中科院分区：
文献类型：
--
作者：
Víllora, EG;Shimamura, K;Ichinose, N
用浮区法生长了直径为1英寸的大尺寸β-Ga_2 O_3单晶。通过对晶体结构的分析，确定了稳定生长的条件。晶片在（100）、（010）和（001）平面上被切割和精细抛光。这些在可见光和近紫外线下是高度透明的，并且是导电的，这表明β-Ga 2 O3作为在可见光/近紫外线下工作的光电器件的衬底和垂直电流流动的潜在用途。(C)2004 Elsevier B. V.保留所有权利。
Large-size single crystals of beta-Ga2O3 with 1 inc in diameter have been grown by the floating zone technique. The stable growth conditions have been determined by the examination of the crystal structure. Wafers have been cut and fine polished in the (100), (010) and (001) planes. These were highly transparent in the visible and near UV, as well as electrically conductive, indicating the potential use of beta-Ga2O3 as a substrate for optoelectic devices operating in the visible/near UV and with vertical current flow. (C) 2004 Elsevier B.V. All rights reserved.