Vacancy ordered structure of the III2VI3 compound semiconductor (GaxIn1−x)2Se3 studied by electron diffraction and microscopy
Vacancy ordered structure of the III2VI3 compound semiconductor (GaxIn1−x)2Se3 studied by electron diffraction and microscopy
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DOI：
10.1080/01418619608242975
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发表时间：
1996
影响因子：
1.6
通讯作者：
Y. Ye;O. Nittono
中科院分区：
文献类型：
--
作者：
Y. Ye;O. Nittono
用电子衍射和高分辨电子显微镜研究了用气相输运法生长的Ⅲ 2 Ⅵ 3族化合物半导体的代表化合物（GaxIn 1-x）2Se 3（x = 0.08-0.40）的晶体结构。晶体结构为缺陷纤锌矿，其中1/3的阳离子位点是空位。这种结构空位有序地沿c轴形成沿着螺旋。空间群为P61或P65，晶格常数为a = 6.92 A，c = 3cw = 18.87 a，Z = 6，组成x = 0.38，其中sufi w表示与纤锌矿结构相关的轴。这表明GaAs的c面和（111）面之间的晶格失配变为零。cw/aw值等于1.573，远小于纤锌矿结构的理想值1.633。原子从理想纤锌矿结构的原子位置的系统位移简单地表征为2-配位原子的位移。
Abstract The crystal structure of (GaxIn1−x)2Se3 (x equals; 0.08–0.40), as a representative of III2VI3 compound semiconductors grown by a vapour transport technique, has been studied by electron diffraction and high-resolution electron microscopy. The crystal structure is a defect wurtzite, in which 1/3 of the cation sites are vacant. Such structure vacancies were ordered to form screws along the c-axis. The space group is P61 or P65 and the lattice constants are a equals; √3a w equals; 6.92 A, c equals; 3cw equals; 18.87 a, Z equals; 6 at the composition x equals; 0.38, where the sufi w denotes the axes referred to the wurtzite structure. This suggests that the lattice mismatch between the c plane and the (111) plane of GaAs becomes zero. The c w/a w value is equal to 1.573, being much smaller than 1.633, the ideal value of the wurtzite structure. Systematic displacements of atoms from the atomic positions of the ideal wurtzite structure were simply characterized by the displacements of the 2-coordinated...