Optical characterization of β-FeSi2 layers formed by ion beam synthesis
Optical characterization of β-FeSi2 layers formed by ion beam synthesis
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DOI：
10.1016/j.mssp.2004.09.099
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发表时间：
2004
影响因子：
4.1
通讯作者：
R. Ayache;A. Bouabellou;E. Richter
中科院分区：
文献类型：
--
作者：
R. Ayache;A. Bouabellou;E. Richter
用离子束合成法在（111）Si衬底上制备了β-FeSi 2薄膜。用红外光谱和拉曼光谱对样品进行了表征。红外（IR）透射光谱显示在310 cm − 1处的吸收，这表明在铁注入硅衬底期间β-FeSi 2沉淀物的初始成核。在850°C退火90 min的β-FeSi_2/（111）Si样品在12 K下的光致发光（PL）测量的主要特征是位于0.811eV的强峰。该峰归属于β-FeSi 2固有的光学辐射跃迁。
Thin β-FeSi2layers have been prepared by ion beam synthesis (IBS) on (111)Si substrates. The obtained samples have been characterized by means of infrared and Raman spectroscopies. The infrared (IR) transmittance spectra show the absorption at 310cm−1as an indication of the initial nucleation of β-FeSi2precipitates during the implantation of iron into silicon substrate. The main feature of the photoluminescence (PL) measurements at 12K in the β-FeSi2/(111)Si samples annealed at 850°C for 90min is an intense peak localized at 0.811eV. This peak is assigned to optical radiative transitions intrinsic to β-FeSi2.