n+-GaAs Back-Gated Double-Quantum-Well Structures with Full Density Control
n+-GaAs Back-Gated Double-Quantum-Well Structures with Full Density Control
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具有全密度控制的 n -GaAs 背栅双量子阱结构
DOI：
10.1143/jjap.39.2444
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发表时间：
2000
影响因子：
1.5
通讯作者：
Y. Hirayama
中科院分区：
文献类型：
--
作者：
K. Muraki;N. Kumada;T. Saku;Y. Hirayama
提出了一种新型的双量子阱(DQW)结构，其上层电子层通过调制掺杂提供，而下层电子层通过n+-GaAs场效应完全诱导。低温输运测量表明，在下层和上层都成功地形成了迁移率相同的二维电子气。通过这种方法，可以在很大的范围内控制较低层中的电子密度，并且背栅偏置很小，因此可以通过前栅和背栅的结合来任意调节DQW中的电子密度分布。
We present the fabrication of a novel double-quantum-well (DQW) structure, in which the upper electron layer is supplied via modulation doping while the lower one is fully induced through the field effect from an n+-GaAs back gate. Low-temperature transport measurements demonstrate that two-dimensional electron gases with equally high mobilities are successfully formed in the lower as well as in the upper QWs. By this approach, the electron density in the lower layer can be controlled over a wide range with a small back-gate bias, and hence the electron-density distribution in the DQW can be tuned arbitrarily by using a front gate in conjunction with the back gate.