Interplay between crystal field splitting and Kondo effect in CeNi9Ge4−xSix
Interplay between crystal field splitting and Kondo effect in CeNi9Ge4−xSix
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CeNi9Ge4âxSix 中晶体场分裂和近藤效应之间的相互作用
DOI：
10.1088/0953-8984/24/35/355601
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
E.-W. Scheidt
中科院分区：
文献类型：
--
作者：
C. Gold;P. Gross;L. Peyker;G. Eickerling;G. G. Simeoni;O. Stockert;E. Kampert;F. Wolff- Fabris;H. Michor;E.-W. Scheidt
用X射线衍射、磁化率、比热、电阻率、热电势和非弹性中子散射等方法研究了CeNi9Ge4−xSix(0≤x≤4)的准三元固溶体。Ge原子被硅原子等电子取代后，竞争Kondo、RKKY和晶场能级的相对强度发生了显著变化。最大的影响是近藤温度TK从CeNi9Ge4的约3.5K持续升高到CeNi9Si4的约70K。这种升高伴随着Ce离子的CF能级方案的变化。不同能量尺度的相互作用导致CENi9Si4(T K∼ΔCf)的基态简并度从具有CeNi9Ge4异常非费米液体特征的有效四倍简并的非磁性近藤基态到较低的一个较低的基态简并，然后增加到六倍完全简并的基态多重态.
The pseudo-ternary solid solution CeNi 9 Ge 4− x Si x (0≤ x≤ 4) has been investigated by means of x-ray diffraction, magnetic susceptibility, specific heat, electrical resistivity, thermopower and inelastic neutron scattering studies. The isoelectronic substitution of germanium by silicon atoms causes a dramatic change of the relative strength of competing Kondo, RKKY and crystal field (CF) energy scales. The strongest effect is the continuous elevation of the Kondo temperature T K from approximately 3.5 K for CeNi 9 Ge 4 to about 70 K for CeNi 9 Si 4. This increase of the Kondo temperature is attended by a change of the CF level scheme of the Ce ions. The interplay of the different energy scales results in an incipient reduction of the ground state degeneracy from an effectively fourfold degenerate non-magnetic Kondo ground state with unusual non-Fermi-liquid features of CeNi 9 Ge 4 to a lower one, followed by an increase towards a sixfold, fully degenerate ground state multiplet in CeNi 9 Si 4 (T K∼ Δ CF).
Ho 2 Fe 17 的高场磁化
影响因子：
3.7
作者：
Y. Skourski;M. Kuz’min;K. Skokov;A. Andreev;J. Wosnitza
通讯作者：
J. Wosnitza
CexLa1-xCu2.05Si 金属间化合物中的近藤效应
影响因子：
3.7
作者：
I. Aviani;M. Miljak;V. Zlatić;K. Schotte;C. Geibel;F. Steglich
通讯作者：
F. Steglich
Ce(1-x)LaxNi9Ge4 中不寻常的单离子非费米液体行为。
影响因子：
8.6
作者：
U. Killer;Ernst;G. Eickerling;H. Michor;J. Sereni;Thomas Pruschke;S. Kehrein
通讯作者：
S. Kehrein