Structural and electronic properties of metastable epitaxial FeSi1+x films on Si(111).
Structural and electronic properties of metastable epitaxial FeSi1+x films on Si(111).
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Si(111) 上亚稳态外延 FeSi1 x 薄膜的结构和电子特性。
DOI：
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发表时间：
1992
期刊：
影响因子：
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通讯作者：
Sirringhaus
中科院分区：
文献类型：
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作者：
von Känel H;Maeder;Müller;Onda;Sirringhaus
我们研究了具有CsCl结构的金属亚稳FeSi相在Si（111）上的外延生长和电子特性。当退火温度低于500 ifmmode^circelse extdegreefi{}C时，薄膜（20 AA{}）的化学计量学向${mathm {FeSi}}_{2}$方向发展，对称性没有改变，即具有统计占据金属位的缺陷CsCl结构对所有${mathm {FeSi}}_{1+mathit{x}}$ （0ensuremath{le}xensuremath{le}1）保持外延稳定。厚度大于-20 AA{}的薄膜表现出向立方确保{epsilon}-FeSi相的转变。采用全势线性增强char21{}平面波法计算了FeSi （CsCl）的电子带结构。
We have investigated the epitaxial growth and the electronic properties of a metallic metastable FeSi phase crystallizing with the CsCl structure on Si(111). Upon annealing below 500 ifmmode^circelse extdegreefi{}C the stoichiometry of thin films (20 AA{}) evolves towards ${mathrm{FeSi}}_{2}$ with no change of symmetry, i.e., the defect CsCl structure with a statistical occupation of metal sites remains epitaxially stable for all ${mathrm{FeSi}}_{1+mathit{x}}$ (0ensuremath{le}xensuremath{le}1). Films thicker than -20 AA{} exhibit a transition to the cubic ensuremath{epsilon}-FeSi phase. The electronic band structure of FeSi (CsCl) has been calculated self-consistently using the full-potential linear augmentedchar21{}plane-wave method.