Influence of metal/semiconductor interface on attainable piezoelectric and energy harvesting properties of ZnO
Influence of metal/semiconductor interface on attainable piezoelectric and energy harvesting properties of ZnO
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DOI：
10.1016/j.actamat.2018.10.008
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发表时间：
2019-01-01
期刊：
影响因子：
9.4
通讯作者：
Roedel, Juergen
中科院分区：
文献类型：
--
作者：
Novak, Nikola;Keil, Peter;Roedel, Juergen
压电系数是量化材料在能量收集和传感器应用中的潜在用途的量度。压电材料中自由电荷载流子的高浓度会显著阻碍所产生的压电电荷的使用。在这项研究中，制备了具有欧姆和肖特基接触的未掺杂半导体ZnO单晶，以量化在20摄氏度至-140摄氏度的温度和0.5 Hz至160 Hz的机械负载频率下的有效压电响应。研究表明，金属-半导体界面处静电势垒的形成增加了总电阻，即使在室温下也可以获得ZnO单晶的无偏压电系数。这些发现得到了验证，使用半导体ZnO的能量收集在室温和相对较低的加载频率。(C)2018 Acta Materialia Inc.由爱思唯尔有限公司出版。保留所有权利。
The piezoelectric coefficient is a measure to quantify the potential use of a material in energy harvesting and sensor applications. High concentration of free charge carriers in piezoelectric materials can significantly impede the use of generated piezoelectric charge. In this study, undoped semiconducting ZnO single crystals with both Ohmic and Schottky contacts were prepared to quantify the effective piezoelectric response at temperatures from 20 degrees C to -140 degrees C and frequencies of mechanical loading from 0.5 Hz to 160 Hz. It was demonstrated that the formation of an electrostatic potential barrier at the metal-semiconductor interface increases the overall resistance, which provides access to unbiased piezoelectric coefficients of ZnO single crystals even at room temperature. These findings were verified using semiconducting ZnO for energy harvesting at room temperature and relatively low loading frequency. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.