Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method
Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method
复制标题
升华法制备的块状 GaN 上生长的同质外延 GaN 的光泵受激发射
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
S. Sakai
中科院分区：
文献类型：
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作者：
S. Kurai;Y. Naoi;Toshimi Abe;Susumu Ohmi;S. Sakai
我们首次在室温下观察到了泵浦同质外延GaN的受激发射。采用常压金属有机化学气相沉积（MOCVD）方法在升华法制备的六方GaN衬底上生长了一层同质外延层。泵浦功率密度阈值为0.86MW/cm ~ 2，受激辐射电矢量垂直于c轴偏振。
We have observed stimulated emission at room temperature from a photopumped homoepitaxial GaN for the first time. A homoepitaxial layer was grown by atmospheric metalorganic chemical vapor deposition (MOCVD) on small hexagonal bulk GaN prepared by the sublimation method. The lasing threshold of the pumping power density is 0.86 MW/cm2 and the stimulated emission is polarized with its electric vector perpendicular to the c-axis.