Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments
Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments
复制标题
在极高辐射环境下测试 n-in-p 硅传感器的整体辐射损伤
DOI：
10.1016/j.nima.2010.04.090
复制
发表时间：
2011
期刊：
影响因子：
--
通讯作者：
Hara K
中科院分区：
文献类型：
--
作者：
Hara K
We are developing n+-in-p, p-bulk and n-readout, microstrip sensors, fabricated by Hamamatsu Photonics, as a non-inverting radiation hard silicon detector for the ATLAS tracker upgrade at the super-LHC (sLHC) proposed facility. The bulk radiation damage after neutron and proton irradiations is characterized with the leakage current, charge collection and full depletion voltage. The detectors should provide acceptable signal, signal-to-noise ratio exceeding 15, after the integrated luminosity of 6000fb−1, which is twice the sLHC integrated luminosity goal.
