Post‐annealing effect in reactive r.f.‐magnetron‐sputtered carbon nitride thin films
Post‐annealing effect in reactive r.f.‐magnetron‐sputtered carbon nitride thin films
复制标题
反应性射频磁控溅射氮化碳薄膜的后退火效应
DOI：
--
复制
发表时间：
1999
期刊：
影响因子：
--
通讯作者：
Y. P. Guo
中科院分区：
文献类型：
--
作者：
G. Chen;Yingying Li;Jun Lin;C. Huan;Y. P. Guo
采用反应性r.f.-在Si（100）衬底上磁控溅射。通过傅里叶变换红外光谱（FTIR）、X射线光电子能谱（XPS）和透射电子显微镜（TEM）研究了退火温度对薄膜结构性能的影响。FTIR和XPS结果表明，在真空中退火后，C N相的布居减少。XPS N Is峰表明由于C = N键导致的组分显著弱于其它组分。随着退火温度的升高，样品的红外吸收峰中C-N相的吸收峰更加明显。这些结果表明，弱结合的氮和碳悬挂键的大幅减少。电子衍射测量表明，在700°C真空退火的薄膜中存在多晶C3 N4结构。XPS研究证实，这些结晶相仅由碳和氮组成。
Thin films of CN x were deposited by reactive r.f.-magnetron sputtering on Si(100) substrates. The effect of annealing temperatures on the structural properties of the films has been studied by Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Both FTIR and XPS results show that the population of the C≡N phase decreases upon annealing in a vacuum. The XPS N Is peaks indicate the component due to the C≡N bond to be significantly weaker than the others. An increase of the annealing temperature leads to a more prominent peak corresponding to the C-N phase in the FTIR absorption spectra. These results suggest a substantial decrease of the weakly bound nitrogen and carbon dangling bonds. Electron diffraction measurements reveal the existence of polycrystalline C 3 N 4 structures in films annealed at 700°C in a vacuum. The XPS studies confirmed that these crystalline phases are composed exclusively of carbon and nitrogen.