Formation of highly-uniform multi-stacked InGaAs/GaAs quantum-dots-in-nanowires for photovoltaic applications
Formation of highly-uniform multi-stacked InGaAs/GaAs quantum-dots-in-nanowires for photovoltaic applications
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用于光伏应用的高度均匀多层堆叠 InGaAs/GaAs 纳米线量子点的形成
DOI:
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发表时间:
2013
期刊:
影响因子:
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通讯作者:
and Y. Arakawa
中科院分区:
文献类型:
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作者:
J. Tatebayashi;Y. Ota;K. Tanabe;M. Nishioka;S. Iwamoto;and Y. Arakawa