Epitaxial Growth of III-Nitride/Graphene Heterostructures for Electronic Devices
Epitaxial Growth of III-Nitride/Graphene Heterostructures for Electronic Devices
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DOI：
10.7567/apex.6.061003
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发表时间：
2013-06-01
影响因子：
2.3
通讯作者：
Eddy, Charles R., Jr.
中科院分区：
文献类型：
--
作者：
Nepal, Neeraj;Wheeler, Virginia D.;Eddy, Charles R., Jr.
采用金属有机化学气相沉积（MOCVD）技术在功能化的外延石墨烯（EG）上生长外延GaN薄膜，外延层为薄的（类似于11 nm）共形AlN成核层。拉曼测量显示，在GaN生长后，石墨烯2D峰位于2719 cm（-1）处。x射线衍射分析表明，[0001]取向六角形氮化镓的（0002）峰摇曲线全宽为544 arcsec。FWHM值与报道的在蓝宝石上MOCVD生长GaN的值相似。氮化镓层具有较强的室温光致发光带边发射。GaN在EG上生长的成功演示为iii -氮化物/石墨烯异质结构电子器件的发展提供了可能性，并有望提高其性能。(C) 2013日本应用物理学会
Epitaxial GaN films were grown by metal organic chemical vapor deposition (MOCVD) on functionalized epitaxial graphene (EG) using a thin (similar to 11 nm) conformal AlN nucleation layer. Raman measurements show a graphene 2D peak at 2719 cm(-1) after GaN growth. X-ray diffraction analysis reveals [0001]-oriented hexagonal GaN with (0002) peak rocking curve full width at the half maximum (FWHM) of 544 arcsec. The FWHM values are similar to reported values for GaN grown by MOCVD on sapphire. The GaN layer has a strong room-temperature photoluminescence band edge emission. Successful demonstration of GaN growth on EG opens up the possibility of III-nitride/graphene heterostructure-based electronic devices and promises improved performance. (C) 2013 The Japan Society of Applied Physics