Study of radial growth rate and size control of silicon nanocrystals in square-wave-modulated silane plasmas
Study of radial growth rate and size control of silicon nanocrystals in square-wave-modulated silane plasmas
复制标题
方波调制硅烷等离子体中硅纳米晶的径向生长速率和尺寸控制研究
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
G. Patriarche
中科院分区：
文献类型：
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作者：
T. Nguyen;P. Cabarrocas;G. Patriarche
利用射频电极自偏压随时间的变化和透射电子显微镜研究了高压高稀释硅烷等离子体中硅纳米晶的生长。为了控制尺寸小于12 nm的单分散纳米颗粒的生长，使用了方波调制等离子体。为此，等离子体开启时间保持在1 s以下。通过改变硅烷分压，纳米颗粒的径向生长速率在7.5 ~ 75 nm范围内变化。在硅烷-氦放电中生长的纳米颗粒是非晶态的，而在硅烷-氢-氩放电中是晶态的。令人惊讶的是，气相中的结晶并不取决于颗粒生长的快慢，而是取决于原子氢的存在。
The growth of silicon nanocrystals in high pressure and high dilution silane plasmas is investigated by using the temporal evolution of the self-bias on the radio frequency electrode and transmission electron microscopy. A square-wave-modulated plasma was used in order to control the growth of monodispersed nanoparticles with sizes smaller than 12nm. To this end, the plasma on time was kept below 1s. The radial growth rate of nanoparticles was varied in the range from 7.5to75nm∕s by changing silane partial pressure. Nanoparticles grown in silane-helium discharges have been found amorphous while they are crystalline in silane-hydrogen-argon discharges. Surprisingly, the crystallization in the gaseous phase does not depend on how slow or fast the particles grow but on the presence of atomic hydrogen.