Growth of carbon nanotubes on stainless steel substrates by DC-PECVD
Growth of carbon nanotubes on stainless steel substrates by DC-PECVD
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DOI：
10.1016/j.apsusc.2009.05.106
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发表时间：
2009-11-30
影响因子：
6.7
通讯作者：
Bach Thanh Cong
中科院分区：
文献类型：
--
作者：
Duy, Dao Quang;Kim, Hyun Suk;Bach Thanh Cong
我们报告了通过使用直流等离子体增强化学气相沉积在镀镍不锈钢 (SUS) 基板上制造碳纳米管 (CNT)。合成的CNT的直径约为30nm，长度约为1.2μm。为了验证SUS基底对CNT生长的影响，还在镀镍的Si基底上生长了CNT。与在 Si 基板上生长的 CNT 相比，在 SUS 基板上生长的 CNT 更加均匀。在二极管结构中测量了碳纳米管薄膜的场致发射性能，在SUS基板和阳极之间500微米的间隙处合成的碳纳米管获得了3.87V/μm的开启电场和约1737的场增强因子β。这些结果不仅阐明了基底对CNT生长的影响，而且显示了CNT在场发射应用中的潜力，特别是基于CNT的冷阴极X射线管。 (C) 2009 Elsevier B.V. 保留所有权利。
We report on the fabrication of carbon nanotubes (CNTs) on Ni-coated stainless steel (SUS) substrates by using dc plasma enhanced chemical vapor deposition. The synthesized CNTs have the diameter of about 30 nm and the length of about 1.2 mu m. To verify the effects of SUS substrates on the growth of CNTs, CNTs had also been grown on Ni-coated Si substrates. CNTs grown on the SUS substrates were more uniform compared with those grown on the Si substrates. Field emission properties of the CNT films were measured in the diode configuration, and the turn-on electric field of 3.87 V/mu m and field enhancement factor beta of about 1737 were obtained from the synthesized CNTs at the gap of 500 mu m between the SUS substrate and the anode. These results have not only clarified the effects of the substrate on the growth of CNTs, but also shown the potential of CNTs in field emission applications, especially CNT-based cold-cathode X-ray tubes. (C) 2009 Elsevier B.V. All rights reserved.