Spin- and valley-polarized transport across line defects in monolayer MoS2
Spin- and valley-polarized transport across line defects in monolayer MoS2
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DOI：
10.1103/physrevb.93.041419
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发表时间：
2016-01
影响因子：
3.7
通讯作者：
Artem Pulkin;O. Yazyev
中科院分区：
文献类型：
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作者：
Artem Pulkin;O. Yazyev
本文研究了单层过渡金属二硫属化物中载流子在有序线缺陷上的弹道传输。我们的研究揭示了由自旋-轨道相互作用、自旋和谷滤波驱动的输运间隙的存在，这两者都源于自旋和动量守恒的简单图像，以及电荷载流子传输的电子-空穴不对称性。利用第一性原理绿色函数方法，进一步研究了实验观察到的单层MoS 2中的有序线缺陷，特别是空位线和反转畴边界的电子输运性质.我们的计算表明，在纳米电子器件的基础上，在单层过渡金属dichalcogenides工程周期线缺陷实现几乎完全的自旋极化的电荷载流子的可能性，从而提出了一个实用的方案，为自旋输运的全电控制。
We address the ballistic transmission of charge carriers across ordered line defects in monolayer transition metal dichalcogenides. Our study reveals the presence of a transport gap driven by spin-orbit interactions, spin and valley filtering, both stemming from a simple picture of spin and momentum conservation, as well as the electron-hole asymmetry of charge-carrier transmission. Electronic transport properties of experimentally observed ordered line defects in monolayer MoS2, in particular, the vacancy lines and inversion domain boundaries, are further investigated using first-principles Green's function methodology. Our calculations demonstrate the possibility of achieving nearly complete spin polarization of charge carriers in nanoelectronic devices based on engineered periodic line defects in monolayer transition metal dichalcogenides, thus suggesting a practical scheme for all-electric control of spin transport.