An integrated CMOS micromechanical resonator high-Q oscillator
An integrated CMOS micromechanical resonator high-Q oscillator
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DOI：
10.1109/4.753677
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发表时间：
1999-04-01
影响因子：
5.4
通讯作者：
Howe, RT
中科院分区：
文献类型：
--
作者：
Nguyen, CTC;Howe, RT
本文介绍了一种采用CMOS+表面微机械加工技术制作的单片高Q振荡器，其振荡频率由多晶硅微机械谐振器控制，以达到高稳定性。对微机械谐振器的工作和性能进行了建模，重点是多端口谐振器的电路和噪声建模，讨论了一种利用独特的、增益可控的跨阻维持放大器的串联谐振振荡器的设计。我们表明，在没有自动电平控制回路的情况下，该振荡器的闭环稳态振荡幅度强烈依赖于施加到电容驱动和感测的μ谐振器的去偏置电压。尽管微机械谐振器的高Q确实有助于提高振荡器的稳定性，其有限的功率处理能力超过了Q值的好处，并且阻止了该振荡器实现高Q值振荡器通常期望的高短期稳定性。
A completely monolithic high-Q oscillator, fabricated via a combined CMOS plus surface micromachining technology, is described, for which the oscillation frequency is controlled by a polysilicon micromechanical resonator with the intent of achieving high stability. The operation and performance of micromechanical resonators are modeled, with emphasis on circuit and noise modeling of multiport resonators, A series resonant oscillator design is discussed that utilizes a unique, gain-controllable transresistance sustaining amplifier. We show that in the absence of an automatic level control loop, the closed-loop, steady-state oscillation amplitude of this oscillator depends strongly upon the de-bias voltage applied to the capacitively driven and sensed mu resonator, Although the high-Q of the micromechanical resonator does contribute to improved oscillator stability, its limited power-handling ability outweighs the Q benefits and prevents this oscillator from achieving the high short-term stability normally expected of high-Q oscillators.