Fabrication of vertically aligned carbon nanowalls using capacitively coupled plasma-enhanced chemical vapor deposition assisted by hydrogen radical injection
Fabrication of vertically aligned carbon nanowalls using capacitively coupled plasma-enhanced chemical vapor deposition assisted by hydrogen radical injection
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DOI：
10.1063/1.1762702
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发表时间：
2004-06-07
影响因子：
4
通讯作者：
Hori, M
中科院分区：
文献类型：
--
作者：
Hiramatsu, M;Shiji, K;Hori, M
采用电容耦合射频等离子体增强化学气相沉积技术，在氢自由基注入辅助下制备了二维碳纳米结构。碳球生长在Si，SiO2，和蓝宝石衬底上没有催化剂，和独立的衬底材料。研究了碳纳米管生长与碳源气体等制备条件之间的关系。在使用C_2F_6/H-_2体系的情况下，在衬底上垂直生长定向碳纳米管，而使用CH_4/H-_2体系生长的碳纳米管是波浪形的和薄的（
Two-dimensional carbon nanostructures (carbon nanowalls) were fabricated using capacitively coupled radio-frequency plasma-enhanced chemical vapor deposition assisted by H radical injection. Carbon nanowalls were grown on Si, SiO2, and sapphire substrates without catalyst, and independent of substrate materials. Correlation between carbon nanowall growth and fabrication conditions, such as carbon source gases was investigated. In the case using C2F6/H-2 system, aligned carbon nanowalls were grown vertically on the substrate, while carbon nanowalls grown using CH4/H-2 system were waved and thin (