Facile fabrication of an efficient BiVO4 thin film electrode for water splitting under visible light irradiation
Facile fabrication of an efficient BiVO4 thin film electrode for water splitting under visible light irradiation
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DOI：
10.1073/pnas.1204623109
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发表时间：
2012-07-17
影响因子：
11.1
通讯作者：
Kudo, Akihiko
中科院分区：
文献类型：
--
作者：
Jia, Qingxin;Iwashina, Katsuya;Kudo, Akihiko
将掺F的SnO2(FTO)基片电极浸泡在硝酸铋和NH4VO_3的硝酸溶液中，然后焙烧，制得了一种高效的BiVO_4薄膜电极。对BiVO4薄膜的X射线衍射分析表明，得到了白钨矿-单斜晶型BiVO4光催化活性相。扫描电子显微镜图像显示，FTO衬底表面均匀地覆盖了厚度为300-400 nm的BiVO4薄膜。在1.0V电压下，BiVO4薄膜电极在420 nm处的阳极光电流仅为IPCE的73%。CoO在BiVO4电极上的修饰提高了其光电化学性能。构建了一种用于可见光和模拟日光照射下分解水的光电化学电池，该电池由含和不含CoO的BiVO4薄膜电极和铂对电极组成。通过施加小于1.23V的外加偏压证实了水分解形成H-2和O-2的光电流，这是电解水的理论电压。利用SrTiO_3：Rh光电阴极和BiVO_4光阳极，在可见光照射下实现了不加外加偏压的水分解。
An efficient BiVO4 thin film electrode for overall water splitting was prepared by dipping an F-doped SnO2 (FTO) substrate electrode in an aqueous nitric acid solution of Bi(NO3)(3) and NH4VO3, and subsequently calcining it. X-ray diffraction of the BiVO4 thin film revealed that a photocatalytically active phase of scheelite-monoclinic BiVO4 was obtained. Scanning electron microscopy images showed that the surface of an FTO substrate was uniformly coated with the BiVO4 film with 300-400 nm of the thickness. The BiVO4 thin film electrode gave an excellent anodic photocurrent with 73% of an IPCE at 420 nm at 1.0 V vs. Ag/AgCl. Modification with CoO on the BiVO4 electrode improved the photoelectrochemical property. A photoelectrochemical cell consisting of the BiVO4 thin film electrode with and without CoO, and a Pt counter electrode was constructed for water splitting under visible light irradiation and simulated sunlight irradiation. Photocurrent due to water splitting to form H-2 and O-2 was confirmed with applying an external bias smaller than 1.23 V that is a theoretical voltage for electrolysis of water. Water splitting without applying external bias under visible light irradiation was demonstrated using a SrTiO3:Rh photocathode and the BiVO4 photoanode.