Highly Ordered Fe and Nb Stripe Arrays on Facetted α‐Al2O3 (10$ \bar 1 $0)
Highly Ordered Fe and Nb Stripe Arrays on Facetted α‐Al2O3 (10$ \bar 1 $0)
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DOI：
10.1002/1616-3028(20020517)12:5
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发表时间：
2002-05
影响因子：
19
通讯作者：
M. Huth;K. Ritley;J. Oster;H. Dosch;H. Adrian
中科院分区：
文献类型：
--
作者：
M. Huth;K. Ritley;J. Oster;H. Dosch;H. Adrian
描述了一种利用分子束外延技术在M面蓝宝石α-Al_2O_3(100)衬底上生长高度有序的外延薄膜纳米和中层条纹阵列的工艺。平面蓝宝石衬底表面是不稳定的，在高温下热处理时主要自发形成(101)和(102)纳米面。通过使用这种纳米面蓝宝石作为衬底，在可控的浅入射角度下进行分子束外延生长，通过几何遮蔽和外延层在面上的部分脱湿，可以获得完美的纳米和介观条纹。与其他条带制造策略相比的优势包括：外延质量、可调宽度以及使用成熟的MBE技术生长超导和稀土纳米线的能力。100 nm宽的规则Nb纳米条阵列的生长演示了这一过程。此外，我们还测定了Nb(111)在Al_2O_3(101)面上的外延。举例说明了均匀厚度Nb层在刻面上的周期性缺陷结构对研究II型超导体涡旋动力学的适用性。
A process is described whereby highly ordered arrays of epitaxial thin-film nano- and mesostripes can be grown using molecular beam epitaxy (MBE) techniques on M-plane sapphire α-Al2O3 (100) substrates. The planar sapphire substrate surface is unstable, and spontaneously forms primarily (101) and (102) nanofacets upon annealing at a high temperature. By employing this nanofacetted sapphire as a substrate for MBE growth at controlled shallow incident angles, perfect nano- and mesostripes can be produced by means of geometrical shadowing in conjunction with partial de-wetting of the epilayer on the facets. Advantages over other stripe fabrication strategies include: epitaxial quality, tunable width, and the ability to grow superconducting and rare earth nanowires using well-established MBE techniques. The process is demonstrated by the growth of regular arrays of 100 nm wide Nb nanostripes. Additionally, we have determined the epitaxy of Nb (111) on the Al2O3 (101) facet. The applicability of the periodic defect structure of Nb layers of uniform thickness on the facetted surface is exemplarily demonstrated for the study of the vortex dynamics of type II superconductors.