InGaN Nanohole Arrays Coated by Lead Halide Perovskite Nanocrystals for Solid-State Lighting
InGaN Nanohole Arrays Coated by Lead Halide Perovskite Nanocrystals for Solid-State Lighting
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DOI：
10.1021/acsanm.9b02154
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发表时间：
2020-03-01
影响因子：
5.9
通讯作者：
Itskos, Grigorios
中科院分区：
文献类型：
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作者：
Athanasiou, Modestos;Papagiorgis, Paris;Itskos, Grigorios
在这项工作中，我们证明了通过FRET在InGaN/GaN多量子阱（MQW）纳米孔阵列中的高效光下转换，该阵列涂有用于固态照明的绿色发射CsPbBr 3和FAPbBr（3）纳米晶体（NC）和近红外（IR）FAPbI（3）NC覆盖层。将InGaN MQW图案化成纳米孔阵列允许最小的氮化物-NC分离，同时增加异质界面面积，从而同时提高非辐射和辐射传输效率。稳态和时间分辨光致发光的详细光谱研究表明，在存在NC的情况下，量子阱光致发光衰减时间显著减少，伴随着NC积分发射的显著同时增加，提供了由FRET介导的有效的光下转换的证据，其效率高达与绿色中的83 +/-6%相似，并且与74 +/-5%相似。近红外线
In this work, we demonstrate efficient light down-conversion via FRET in InGaN/GaN multiple quantum well (MQW) nanohole arrays, coated with green-emitting CsPbBr3 and FAPbBr(3) nanocrystals (NCs) and near-infrared (IR) FAPbI(3) NC overlayers for solid-state lighting. Patterning the InGaN MQW into nanohole arrays allows a minimum nitride-NC separation while increasing the heterointerfacial area, thus improving simultaneously the nonradiative and radiative transfer efficiencies. Detailed spectroscopic studies of steady-state and time-resolved photoluminescence indicate a significant reduction in the quantum well photoluminescent decay time in the presence of NCs, accompanied by a significant concurrent increase of the NC integrated emission, providing evidence of efficient light down-conversion mediated by FRET with efficiencies as high as similar to 83 +/- 6% in the green and similar to 74 +/- 5% in the near-IR.