Photo-induced refractive index change of amorphous tin-doped As2S8 films and its application to strip waveguide fabrication
Photo-induced refractive index change of amorphous tin-doped As2S8 films and its application to strip waveguide fabrication
复制标题
DOI：
10.1063/1.3120864
复制
发表时间：
2009-05
影响因子：
3.2
通讯作者：
B. Sun;Bao-xue Chen;G. Sui;Guan-de Wang;L. Zou;M. Iso;H. Hamanaka
中科院分区：
文献类型：
--
作者：
B. Sun;Bao-xue Chen;G. Sui;Guan-de Wang;L. Zou;M. Iso;H. Hamanaka
非晶态硫系玻璃Sn1As20S79在紫外光照射下折射率发生永久性变化。详细研究了这种材料的折射特性和在低于玻璃化转变温度的温度下退火的效果。一个Sn1As20S79条形波导制作使用这种光致折射率变化，并示出该设备的功能与预期的良好的传播特性为632.8 nm的导模。
The amorphous chalcogenide glass Sn1As20S79 is demonstrated to undergo permanent changes in refractive index on irradiation with ultraviolet light. The refractive properties of this material and the effect of annealing at temperatures below the glass transition temperature are investigated in detail. An Sn1As20S79 strip waveguide is fabricated using this photoinduced refractive index change, and the device is shown to function as expected with good propagation characteristics for the 632.8 nm guided mode.