Bending-comb capacitor with a small parasitic inductance
Bending-comb capacitor with a small parasitic inductance
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寄生电感小的弯梳电容
DOI：
10.1109/vlsic.2002.1015033
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
K. Hoh
中科院分区：
文献类型：
--
作者：
Akira Imamura;M. Fujishima;K. Hoh
基于标准的数字CMOS技术，提出了一种寄生电感小的新型金属-金属电容器——弯梳电容器（BCC）。BCC自谐振频率高，适用于高频电路。从几何尺寸的分析评价电容也提出了。采用0.13-/spl mu/m铜线CMOS工艺，BCC为0.85 pF，尺寸为10 /spl mu/m /倍/ 100 /spl mu/m的自共振频率估计为374 GHz。该频率比传统梳状电容器估计的频率高约六倍。
A new metal-metal capacitor with a small parasitic inductance, named a bending-comb capacitor (BCC), is proposed based on a standard digital CMOS technology. The BCC is applicable to high frequency circuits due to its high self-resonance frequency. An analytical evaluation of the capacitance from the geometry size is also presented. The self-resonance frequency of the BCC of 0.85 pF with the size of 10 /spl mu/m /spl times/ 100 /spl mu/m is estimated as 374 GHz with a 0.13-/spl mu/m Cu-wiring CMOS process. This frequency is about six times higher than that estimated by the conventional comb capacitor.