Electrical, structural and optical properties of SnO2:F thin films: Effect of the substrate temperature
Electrical, structural and optical properties of SnO2:F thin films: Effect of the substrate temperature
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DOI：
10.1016/j.jallcom.2009.08.130
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发表时间：
2009-11
影响因子：
6.2
通讯作者：
A. A. Yadav-A.;E. U. Masumdar;A. Moholkar;M. Neumann-Spallart;K. Rajpure;C. H. Bhosale
中科院分区：
文献类型：
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作者：
A. A. Yadav-A.;E. U. Masumdar;A. Moholkar;M. Neumann-Spallart;K. Rajpure;C. H. Bhosale
采用简单、成本低廉的化学喷雾热分解技术，在不同的衬底温度下，从四氯化锡溶液中制备了SnO_2：F薄膜。采用X射线衍射（XRD）、扫描电镜（SEM）、光学和电学等技术对薄膜进行了表征。XRD分析表明，在较低的衬底温度下，薄膜为非晶态，而在较高的衬底温度下（T>450°C），薄膜为晶态，薄膜沿沿着（200）面择优生长。在可见光区的平均透射率已被发现从60%到87%，这取决于基板温度。在光谱的可见光区，透射率非常高（高到足以观察到干涉）。对于在475°C下制备的膜，已经观察到在850 nm处约87%的相对较高的透射率。薄膜厚度随衬底温度的变化范围为440 ~ 740 nm。测得SnO_2：F薄膜的直接光学带隙能量为4.15eV。发现在475°C衬底温度下沉积的薄膜具有相对较低的电阻率，为3.91×10−4Ωcm。霍尔效应研究表明，薄膜具有n型导电性。
SnO2:F thin films have been deposited from stannic chloride solution by simple and cost effective chemical spray pyrolysis technique onto glass substrates at different substrate temperatures. The as-deposited films were characterized by X-ray diffraction (XRD), SEM, optical and electrical characterization techniques. XRD analysis showed that, at lower substrate temperature; amorphous films have been obtained, while at higher temperatures (T>450°C); crystalline SnO2:F films with preferential growth along (200) plane have been observed. The average transmission in the visible region has been found to vary from 60% to 87% depending upon the substrate temperature. In the visible region of the spectrum, the transmission is very high (high enough to observe interference). For films prepared at 475°C, relatively higher transmittance of about 87% at 850nm has been observed. A thickness was found to vary from 440nm to 740nm with substrate temperature. The direct optical band gap energy for the SnO2:F thin film is found to be 4.15eV. The films deposited at 475°C substrate temperature were found to have relatively lower resistivity of 3.91×10−4Ωcm. Hall Effect studies reveal that the films exhibit n-type conductivity.