Vertical p-Type Cu-Doped ZnO/n-Type ZnO Homojunction Nanowire-Based Ultraviolet Photodetector by the Furnace System with Hotwire Assistance
Vertical p-Type Cu-Doped ZnO/n-Type ZnO Homojunction Nanowire-Based Ultraviolet Photodetector by the Furnace System with Hotwire Assistance
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DOI：
10.1021/am406030d
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发表时间：
2014-03-26
影响因子：
9.5
通讯作者：
Hsueh, Ting-Jen
中科院分区：
文献类型：
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作者：
Hsu, Cheng-Liang;Gao, Yi-Dian;Hsueh, Ting-Jen
在ZnO薄膜/玻璃衬底上，通过600 ℃的加热炉和1700 ℃的热线辅助，合成了垂直的p-ZnO：Cu/n-ZnO同质结纳米线和完整的ZnO：Cu纳米线。根据ZnO：Cu NW研究，能量色散X射线（EDX）光谱表明Cu含量为3.01原子%。随着Cu掺杂量的增加，ZnO：Cu纳米线的X射线衍射（XRD）峰向大角度方向移动。Cu掺杂增强了纳米线的光致发光（PL）绿带峰，降低了纳米线的电导率。气敏测量和霍尔效应验证了ZnO：Cu纳米线均为p型。在这项研究中，透射电子显微镜（TEM）和EDX映射图像显示，大部分的Cu元素位于顶部的p-ZnO：Cu/n-ZnO NW。高分辨率透射电子显微镜（HRTEM）图像显示，纳米线是[0001]取向生长的，侧面被（1）在棒101上的平面包围。p-ZnO：Cu/n-ZnO纳米线的I-V曲线显示了普通整流二极管的特性。在5V的反向偏压下，紫外（UV）曝光下的光电流比暗电流高约6倍。
Vertical p-ZnO:Cu/n-ZnO homojunction nanowires (NWs) and whole ZnO:Cu NWs were synthesized on a ZnO thin film/glass substrate by a furnace at 600 degrees C with 1700 degrees C hotwire assistance. According to the ZnO:Cu NW investigation, the energy-dispersive X-ray (EDX) spectrum indicates that the Cu content is 3.01 atomic %. The X-ray diffraction (XRD) peaks of ZnO:Cu NWs shift toward larger angles with increasing amounts of doped Cu. The Cu dopant enhanced the photoluminescence (PL) green-band peak and decreased the conductivity of the NWs, as measured by I V. The gas sensing measurement and Hall effect verified that all ZnO:Cu NWs were p-type. In this study, transmission electron microscopy (TEM) and EDX mapping images revealed that the majority of the Cu element is located at the top of the p-ZnO:Cu/n-ZnO NW. The high-resolution transmission electron microscopy (HRTEM) image of the p-ZnO:Cu region shows that the NWs are [0001] growth-oriented, with lateral surfaces enclosed by ((1) over bar 101) planes. The I-V curve of p-ZnO:Cu/n-ZnO NWs displays the characteristics of normal rectifying diodes. The photocurrent under ultraviolet (UV) exposure was around 6 times higher than the dark current at the reverse bias of 5 V.