A Low-Loss Diode Integrated SiC Trench MOSFET for Improving Switching Performance
A Low-Loss Diode Integrated SiC Trench MOSFET for Improving Switching Performance
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DOI：
10.1109/ted.2022.3208802
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发表时间：
2022-10-05
影响因子：
3.1
通讯作者：
Zhang, Bo
中科院分区：
文献类型：
--
作者：
Ding, Jiawei;Deng, Xiaochuan;Zhang, Bo
提出了一种集成低损耗二极管（LLD- ATMOS）的新型碳化硅非对称沟槽MOSFET，并对其进行了数值模拟研究，以降低开关损耗和消除体二极管的双极退化。虚拟栅极下的N沟道区域提供了一个低势垒路径，将电子从N漂移层传输到N+源区域，结果将pn体二极管的正向传导电压降从10 a时的3.5 V降至10 a时的1.9 V。与传统非对称沟槽MOSFET （C-ATMOS）相比，LLD的反向恢复电荷（QRR）和栅极漏极电容（Cgd）分别降低了76%和95%。因此，LLD-ATMOS的关断和导通损耗分别降低了49%和58%。LLD-ATMOS计算的高频优值（HF-FOM = R-ON,(sp) x C-gd）大大降低到C-ATMOS值的十四分之一。此外，还建立了LLD的导带能量分析模型。性能的提高表明，LLD-ATMOS在电力电子系统中是一个有竞争力的选择。
A novel silicon carbide (SiC) asymmetric trench MOSFET with integrated low-loss diode (LLD- ATMOS) is proposed and investigated by numerical simulations to reduce switching loss and eliminate bipolar degradation of body diode. The N-channel region beneath the dummy gate provides a low barrier path to transport electrons form the N-drift layer to N+ source region, with the result that the forward conduction voltage drop is reduced from 3.5 V at 10 A of the pn body diode to 1.9 V at 10 A of the LLD-ATMOS. Furthermore, the reverse recovery charge (QRR) of LLD and the gate-to-drain capacitance ( Cgd) of LLD-ATMOS are 76% and 95% lower than those of the conventional asymmetric trench MOSFET (C-ATMOS). As a result, the turn-off and turn-on losses of LLD-ATMOS are reduced by 49% and 58%, respectively. The calculated high-frequency figure of merit (HF-FOM = R-ON,(sp) x C-gd) of LLD-ATMOS is tremendously decreased to one-fourteenth of the value of C-ATMOS. In addition, a conduction band energy analysis model for the LLD is developed. The improved performances suggest that LLD-ATMOS is a competitive option in power electronic systems.