Reduction in operation voltage of complementary organic thin-film transistor inverter circuits using double-gate structures
Reduction in operation voltage of complementary organic thin-film transistor inverter circuits using double-gate structures
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DOI：
10.1063/1.2709991
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发表时间：
2007-02
影响因子：
4
通讯作者：
K. Hizu;T. Sekitani;T. Someya;J. Otsuki
中科院分区：
文献类型：
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作者：
K. Hizu;T. Sekitani;T. Someya;J. Otsuki
作者已经制造了包括p型并五苯和n型氟代烷基萘四甲酸二酰亚胺薄膜晶体管（TFT）的有机反相器。TFT具有独立控制p型和n型TFT的阈值电压的双栅极结构。p型和n型晶体管的迁移率分别为0.18和0.09cm ~ 2 scinVs。所制造的p型和n型TFT都表现出耗尽型行为，其可以通过向顶栅电极施加电压偏置而改变为增强型行为。通过控制顶栅偏置，有机反相器电路的工作电压可以系统地降低到5V。
The authors have fabricated organic inverters comprising p-type pentacene and n-type fluoroalkyl naphthalenetetracarboxylic di-imide thin-film transistors (TFTs). The TFTs have double-gate structures that independently control the threshold voltage of the p- and n-type TFTs. The mobilities of the p- and n-type transistors are 0.18 and 0.09cm2∕Vs, respectively. Both the as-manufactured p- and n-type TFTs exhibit depletion-type behavior, which can be changed to enhancement-type behavior by applying a voltage bias to the top-gate electrodes. By controlling the top-gate biases, the operation voltage of the organic inverter circuits can be systematically reduced to 5V.