Phosphorus molecules on Ge(001): a playground for controlled n-doping of germanium at high densities.
Phosphorus molecules on Ge(001): a playground for controlled n-doping of germanium at high densities.
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DOI：
10.1021/nn4051634
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发表时间：
2013-11
期刊：
影响因子：
17.1
通讯作者：
G. Mattoni;W. Klesse;G. Capellini;M. Simmons;Giordano Scappucci
中科院分区：
文献类型：
--
作者：
G. Mattoni;W. Klesse;G. Capellini;M. Simmons;Giordano Scappucci
在Ge中实现受控的高n型掺杂将能够制造许多创新的纳米电子和光子器件。在这项工作中，我们提出了一个相结合的扫描隧道显微镜，二次离子质谱，和磁输运的研究，以了解原子掺杂过程的锗P2分子。利用P2分子在Ge（001）表面上的一个二聚体足迹，我们使用相对较低的工艺温度实现了在Ge中完整的P单层的掺入。然而，P-P二聚体的随后形成将电激活限制在对应于小于单个二聚体行的P-P间距的临界供体密度以上。有了这个洞察力，掺杂参数的调整使我们能够重复堆叠这样的2D P层，以实现高达102 × 10（20）cm（-3）的3D电子密度。
The achievement of controlled high n-type doping in Ge will enable the fabrication of a number of innovative nanoelectronic and photonic devices. In this work, we present a combined scanning tunneling microscopy, secondary ions mass spectrometry, and magnetotransport study to understand the atomistic doping process of Ge by P2 molecules. Harnessing the one-dimer footprint of P2 molecules on the Ge(001) surface, we achieved the incorporation of a full P monolayer in Ge using a relatively low process temperature. The consequent formation of P-P dimers, however, limits electrical activation above a critical donor density corresponding to P-P spacing of less than a single dimer row. With this insight, tuning of doping parameters allows us to repeatedly stack such 2D P layers to achieve 3D electron densities up to ∼2 × 10(20) cm(-3).