Nondestructive measurement of homoepitaxially grown GaN film thickness with Fourier transform infrared spectroscopy
Nondestructive measurement of homoepitaxially grown GaN film thickness with Fourier transform infrared spectroscopy
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利用傅里叶变换红外光谱法无损测量同质外延生长的 GaN 薄膜厚度
DOI：
10.7567/jjap.56.120301
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发表时间：
2017
影响因子：
1.5
通讯作者：
Takehiro Yoshida
中科院分区：
文献类型：
--
作者：
F. Horikiri;Yoshinobu Narita;Takehiro Yoshida
在GaN衬底上含有GaN同外延层的垂直器件中，层厚度是开始器件工艺之前需要澄清的关键参数。我们将傅里叶变换红外光谱（FT-IR）应用于由n -GaN层组成的同外延生长的GaN膜。FT-IR光谱估计的膜厚与横断面扫描电镜阴极发光图像的结果吻合较好。这是首次报道了对同外延生长GaN的无损薄膜厚度测量，并表明了FT-IR对垂直GaN功率器件无损检测的适用性。
In vertical devices containing GaN homoepitaxial layers on GaN substrates, the layer thickness is a key parameter that needs to be clarified before starting the device process. We applied Fourier transform infrared spectroscopy (FT-IR) to a homoepitaxially grown GaN film that consisted of an n−-GaN layer. The estimated film thickness from the FT-IR spectrum agreed well with the results of cross-sectional scanning electron microscope cathodoluminescence images. This is the first report of nondestructive film thickness measurements for homoepitaxially grown GaN and indicates the applicability of FT-IR to the nondestructive inspection of vertical GaN power devices.