A Van Der Waals Photo‐Ferroelectric Synapse

A Van Der Waals Photo‐Ferroelectric Synapse
复制标题

DOI:
10.1002/aelm.202200326
复制
发表时间:
2022-06
影响因子:
6.2
通讯作者:
Yao Cai;Lifu Zhang;Jie Jiang;Yang Hu;Zhizhong Chen;Ru Jia;Chengliang Sun;Jian Shi
Yao Cai;Lifu Zhang;Jie Jiang;Yang Hu;Zhizhong Chen;Ru Jia;Chengliang Sun;Jian Shi
中科院分区:
材料科学2区
文献类型:
--
作者:
Yao Cai;Lifu Zhang;Jie Jiang;Yang Hu;Zhizhong Chen;Ru Jia;Chengliang Sun;Jian Shi

文献摘要

被引文献

相似文献

硬件人工智能的核心任务是设计和开发具有所需特性的人工神经突触。在这里,设计和实验演示的货车范德华(vdW)的光电突触的报告。在光-铁电突触中,突触记忆通过阅读光电流来提取,并通过电脉冲来写入或编辑。半导体vdW有机-无机卤化物钙钛矿((R)-(-)-1-环己基乙基铵)PbI 3(R-CYHEAPbI 3)光铁电体用作模型光铁电体通道。在这里,vdW有机层提供铁电偶极子,PbI 6八面体负责光子吸收和电荷传输。R-CYHEAPbI 3光-铁电突触显示出写入/阅读动力学,具有>200个突触状态,接近103开/关比,以及合理的耐久性和保持特性。通过实验测量R-CYHEAPbI 3突触的权重动态(通过铁电光伏效应并行阅读和通过电脉冲写入),提出了使用交叉电路实现手写数字的经典训练和推理的可行性。图像识别的准确率高达90%。这种vdW光铁电突触的演示为人工智能先进设备的设计打开了一扇窗户。
For hardware artificial intelligence, the central task is to design and develop artificial synapses with needed characteristics. Here, the design and experimental demonstration of a van der Waals (vdW) photo‐ferroelectric synapse are reported. In the photo‐ferroelectric synapse, the synaptic memory is extracted by reading the photocurrent, and written or edited by electrical pulses. The semiconducting vdW organic‐inorganic halide perovskite ((R)‐(–)‐1‐cyclohexylethylammonium)PbI3 (R‐CYHEAPbI3) photo‐ferroelectric serves as the model photo‐ferroelectric channel. Here, the vdW organic layer provides ferroelectric dipole and the PbI6 octahedron is responsible for photon absorption and charge transport. The R‐CYHEAPbI3 photo‐ferroelectric synapse show a writing/reading dynamics with >200 synaptic states, close to 103 on/off ratio, and reasonable endurance and retention characteristics. With the experimentally measured weight dynamics (parallel reading through ferroelectric photovoltaic effect and writing by electrical pulses) of R‐CYHEAPbI3 synapses, the feasibility of using a crossbar circuit to implement classic training and inference of hand‐written digits is presented. An image recognition accuracy of up to 90% is obtained. The demonstration of such a vdW photo‐ferroelectric synapse opens a window in the design of advanced devices for artificial intelligence.