Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics
Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics
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DOI：
10.1063/1.3643139
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发表时间：
2011-09
影响因子：
4
通讯作者：
Yuanjie Lv;Zhaojun Lin;L. Meng;Yingxia Yu;Chongbiao Luan;Zhifang Cao;Hong Chen;Baoquan Sun;
中科院分区：
文献类型：
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作者：
Yuanjie Lv;Zhaojun Lin;L. Meng;Yingxia Yu;Chongbiao Luan;Zhifang Cao;Hong Chen;Baoquan Sun;
在AlGaN/AlN/GaN异质结上制备了圆形和矩形Ni肖特基接触。两种肖特基势垒的高度都是用内光电子能谱测量的。对AlGaN/AlN/GaN异质结肖特基接触的平带电压(V0)进行了分析，并从正向电流-电压(I-V)特性得到了平带电压V0。基于正向I-V特性，利用获得的平带电压，通过自洽求解薛定谔方程和泊松方程，分析和计算了圆形和矩形二极管的肖特基势垒高度。所制备的圆形和矩形Ni肖特基二极管的肖特基势垒高度与光电流测量结果吻合较好。
Both circular and rectangular Ni Schottky contacts on AlGaN/AlN/GaN heterostructures have been fabricated. Both of the Schottky barrier heights were measured by internal photoemission. The flat-band voltage (V0) for the AlGaN/AlN/GaN heterostructure Schottky contacts was analyzed and obtained from the forward current-voltage (I-V) characteristics. Based on the forward I-V characteristics and with the obtained flat-band voltage, the Schottky barrier heights for the circular and rectangular diodes have been analyzed and calculated by self-consistently solving Schrodinger’s and Poisson’s equations. The evaluated Schottky barrier heights for the prepared circular and rectangular Ni Schottky diodes agree well with the photocurrent measured results.