Application of Two-Dimensional MoSe2 Atomic Layers to the Lift-Off Process for Producing Light-Weight and Flexible Bifacial Cu(In, Ga)Se2 Solar Cells
Application of Two-Dimensional MoSe2 Atomic Layers to the Lift-Off Process for Producing Light-Weight and Flexible Bifacial Cu(In, Ga)Se2 Solar Cells
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DOI：
10.1021/acsaem.0c01557
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发表时间：
2020-10-26
影响因子：
6.4
通讯作者：
Minemoto, Takashi
中科院分区：
文献类型：
--
作者：
Nishimura, Takahito;Hamada, Naoto;Minemoto, Takashi
提出了将二维MoSe 2原子层应用于剥离工艺制备轻质柔性双面Cu（In，Ga）Se-2（CIGS）太阳电池。结果表明，CIGS太阳能电池成功地剥离时，Mo和CIGS层之间形成的MoSe 2的c轴垂直于Mo表面。在这项研究中，11.5%的效率剥离电池制造，表明高性能比为95.0%相比，12.1%的效率基板电池，从而表明分层生长的MoSe 2的剥离程序的有用性。最后，通过应用剥离工艺，得到了利用薄的Au和Sn掺杂In 2 O3背接触的轻质且柔性的双面CIGS太阳能电池。
The application of two-dimensional MoSe2 atomic layers to the lift-off process is proposed for the preparation of lightweight and flexible bifacial Cu(In, Ga)Se-2 (CIGS) solar cells. The results show that CIGS solar cells are successfully peeled from a Mo rear contact when the c-axis of the MoSe2, formed between the Mo and CIGS layers, is vertically oriented to the Mo surface. In this study, 11.5% efficient lift-off cells are fabricated, indicating a high-performance ratio of 95.0% compared with the 12.1% efficient substrate cells, thereby suggesting the usefulness of layered-grown MoSe 2 for the lift-off procedure. Finally, by applying the lift-off process, light-weight and flexible bifacial CIGS solar cells utilizing thin Au and Sn-doped In2O3 back contacts are derived.