Efficient Solar Water Oxidation to Oxygen over Mo-doped BiVO4 Thin Film Photoanode Prepared by a Facile Aqueous Solution Route
Efficient Solar Water Oxidation to Oxygen over Mo-doped BiVO4 Thin Film Photoanode Prepared by a Facile Aqueous Solution Route
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DOI：
10.1246/cl.170052
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发表时间：
2017-05-01
影响因子：
1.6
通讯作者：
Kudo, Akihiko
中科院分区：
文献类型：
--
作者：
Iwase, Akihide;Ikeda, Satoru;Kudo, Akihiko
一个有效的Mo掺杂BiVO 4光电极水氧化容易地从Bi，V-，和Mo的含水前驱体溶液制备。通过改变前驱体溶液的体积可以控制BiVO 4薄膜的厚度，得到厚度为130-260 nm的透明BiVO 4薄膜。Mo掺杂的BiVO 4光电极显示出更高的光电流比通过相同的程序制备的非掺杂BiVO 4光电极。具有CoOx表面改性的Mo掺杂的BiVO 4电极的入射光子-电流效率（IPCE）在420 nm处在1.23V相对于RHE达到33%。
An efficient Mo-doped BiVO4 photoelectrode for water oxidation was easily prepared from a Bi-, V-, and Mo-containing aqueous precursor solution. The thickness of BiVO4 films was controllable by changing the volume of the precursor solution, giving a transparent BiVO4 film with a thickness of 130-260 nm. The Mo-doped BiVO4 photoelectrodes showed higher photocurrents than a non-doped BiVO4 photoelectrode prepared by the same procedure. An incident photon-to-current efficacy (IPCE) of the Mo-doped BiVO4 electrode with CoOx surface modification reached 33% at 1.23V vs. RHE at 420 nm.