Environmentally friendly nitrogen-doped carbon quantum dots for next generation solar cells
Environmentally friendly nitrogen-doped carbon quantum dots for next generation solar cells
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DOI：
10.1039/c7se00158d
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发表时间：
2017-09-01
影响因子：
5.6
通讯作者：
Mariotti, Davide
中科院分区：
文献类型：
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作者：
Carolan, Darragh;Rocks, Conor;Mariotti, Davide
照在你疯狂的碳！在这项工作中，氮掺杂的碳量子点（N-CQD）的合成使用一个简单的自定义大气压微等离子体。该方法简便、快速、环境友好，N-CQD可以在几分钟内制备，不需要高温、复杂的化学技术或表面配体。N-CQD使用分子前体形成，并且可以在不同的溶剂混合物中生产。材料表征技术表明，氮的量取决于初始反应条件的QD表面上的氮掺杂的程度很高。N-CQD显示出有趣的量子限制光学性质，其取决于氮掺入的量。重要的是，阐明了N-CQD的能带能量结构，并且将它们作为光活性层并入光伏器件中，实现了1.8V的非凡开路电压和0.8%的功率转换效率（冠军器件），是迄今为止报道的IV族和碳基量子点中最高的。
Shine on you crazy carbon! In this work, nitrogen-doped carbon quantum dots (N-CQDs) are synthesized using a simple custom atmospheric pressure microplasma. The method is facile, rapid, and environmentally friendly and the N-CQDs can be produced in a few minutes with no need for high temperature, complicated chemical techniques, or surface ligands. The N-CQDs are formed using molecular precursors and can be produced in different solvent mixtures. Material characterization techniques show a high degree of nitrogen doping on the QD surface with the amount of nitrogen depending on initial reaction conditions. The N-CQDs show interesting quantum confined optical properties that depend on the amount of nitrogen incorporation. Importantly, the band energy structure of the N-CQDs is elucidated and they are incorporated into a photovoltaic device as the photoactive layer achieving an extraordinary open-circuit voltage of 1.8 V and a power conversion efficiency of 0.8% (champion device), amongst the highest reported to date for group IV and carbon based quantum dots.