A Large Magnetoresistance Effect in p-n Junction Devices by the Space-Charge Effect
A Large Magnetoresistance Effect in p-n Junction Devices by the Space-Charge Effect
复制标题
空间电荷效应在p-n结器件中的大磁阻效应
DOI：
10.1002/adfm.201202695
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发表时间：
2013-06-20
影响因子：
19
通讯作者：
Xue, Desheng
中科院分区：
文献类型：
--
作者：
Yang, Dezheng;Wang, Fangcong;Xue, Desheng
本文报道了在较宽的温度和磁场范围内，垂直几何形状的硅基p-n结上发现了极大的磁阻效应。在磁场为5T、外加偏压仅为6V的室温下，Sip-n结的磁电阻率为2500%，而在100K时的磁电阻率为25000%。在不同的外加磁场下，Sip-n结的电流-电压(I-V)行为服从指数关系，电场不均匀和载流子浓度变化对磁阻效应的贡献显著增强。采用经典p-n结输运方程对p-n结在不同磁场下的I-V曲线进行了理论分析，揭示了大磁阻效应源于外加磁场引起p-n结空间电荷区的变化。结果表明，基于电磁响应的相互作用，传统的p-n结有望成为一种多功能材料，这对半导体工业中未来的磁电子学具有重要意义。
The finding of an extremely large magnetoresistance effect on silicon based p-n junction with vertical geometry over a wide range of temperatures and magnetic fields is reported. A 2500% magnetoresistance ratio of the Si p-n junction is observed at room temperature with a magnetic field of 5 T and the applied bias voltage of only 6 V, while a magnetoresistance ratio of 25 000% is achieved at 100 K. The current-voltage (I-V) behaviors under various external magnetic fields obey an exponential relationship, and the magnetoresistance effect is significantly enhanced by both contributions of the electric field inhomogeneity and carrier concentrations variation. Theoretical analysis using classical p-n junction transport equation is adapted to describe the I-V curves of the p-n junction at different magnetic fields and reveals that the large magnetoresistance effect origins from a change of space-charge region in the p-n junction induced by external magnetic field. The results indicate that the conventional p-n junction is proposed to be used as a multifunctional material based on the interplay between electronic and magnetic response, which is significant for future magneto-electronics in the semiconductor industry.