Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates
Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates
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DOI：
10.1088/0957-4484/20/45/455201
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发表时间：
2009-11
期刊：
影响因子：
3.5
通讯作者：
Myeongwon Lee;Jamin Koo;Eun-ae Chung;D. Jeong;Yong-Seo Koo;Sangsig Kim
中科院分区：
文献类型：
--
作者：
Myeongwon Lee;Jamin Koo;Eun-ae Chung;D. Jeong;Yong-Seo Koo;Sangsig Kim
首次提出了一种在柔性塑料衬底上实现硅纳米线隧穿场效应晶体管的技术。p-i-n结构的硅纳米线是使用传统的自顶向下CMOS兼容技术从硅晶片获得的，然后将它们转移到塑料衬底上。基于栅控带-带隧穿（BTBT）作为其工作原理，基于SiNW的TFT显示出正常的p沟道开关行为，阈值电压为-1.86 V，亚阈值摆幅为827 mV/dec。此外，由于重掺杂p+漏极和n+沟道区之间存在BTBT，这表明我们的TFTTL也可以在n沟道模式下工作。此外，对于p沟道和n沟道操作模式的BTBT生成速率几乎与塑料基板的弯曲状态（应变= 0.8%）无关。
A technique to implement silicon nanowire (SiNW)-based tunneling field-effect transistors (TFETs) on flexible plastic substrates is developed for the first time. The p-i-n configured Si NWs are obtained from an Si wafer using a conventional top-down CMOS-compatible technology, and they are then transferred onto the plastic substrate. Based on gate-controlled band-to-band tunneling (BTBT) as their working principle, the SiNW-based TFETs show normal p-channel switching behavior with a threshold voltage of −1.86 V and a subthreshold swing of 827 mV/dec. In addition, ambipolar conduction is observed due to the presence of the BTBT between the heavily doped p+ drain and n+ channel regions, indicating that our TFETs can operate in the n-channel mode as well. Furthermore, the BTBT generation rates for both the p-channel and n-channel operating modes are nearly independent of the bending state (strain = 0.8%) of the plastic substrate.