Automated STEM/EDS Metrology Characterization of 3D NAND Devices
Automated STEM/EDS Metrology Characterization of 3D NAND Devices
复制标题
3D NAND 器件的自动化 STEM/EDS 计量表征
DOI：
10.1017/s1431927617007954
复制
发表时间：
2017
影响因子：
2.8
通讯作者：
J. Donald
中科院分区：
文献类型：
--
作者：
Zhenxin Zhong;J. Roller;Oleksii Bidiuk;J. Blackwood;M. Verheijen;O. Ugurlu;J. Donald
半导体和存储行业经历了从传统平面器件到复杂3D架构（如3D NAND和finfet）的重大转变。新材料和新设计提高了测量的复杂性，并大大增加了过程控制所需的关键尺寸测量的数量。3D NAND提出了许多计量方面的挑战，包括低对比度特性、高纵横比沟槽和多堆栈中的孔洞。许多技术，如STEM/TEM成像，临界尺寸小角度x射线光谱学（CD-SAXS）和通过聚焦扫描光学显微镜，已经被探索来解决这些计量挑战。目前形式的技术还没有充分达到测量这些3D NAND结构所需的关键尺寸的灵敏度和分辨率。
The semiconductor and memory industries have experienced a major transition from conventional planar devices to complex 3D architectures, such as 3D NAND and FinFETs. New materials and designs have raised metrology complexity and greatly increased the number of critical dimension measurements required for process control. 3D NAND presents many metrology challenges including low contrast features, high aspect ratio trenches, and holes in multiple stacks. Many technologies, such as STEM/TEM imaging, critical dimension small angle X-ray spectroscopy (CD-SAXS) and through focus scanning optical microscopy, have been explored to address these metrology challenges. The techniques in their present forms haven’t adequately achieved the sensitivity and resolution to measure the required critical dimensions of these 3D NAND structures.