Optimization of proton conductivity in graphene oxide by filling sulfate ions.
Optimization of proton conductivity in graphene oxide by filling sulfate ions.
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DOI：
10.1039/c4cc07273a
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发表时间：
2014-10
影响因子：
4.9
通讯作者：
Kazuto Hatakeyama;Mohammad Razaul Karim;C. Ogata;Hikaru Tateishi;T. Taniguchi;M. Koinuma;S. Hayami
中科院分区：
文献类型：
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作者：
Kazuto Hatakeyama;Mohammad Razaul Karim;C. Ogata;Hikaru Tateishi;T. Taniguchi;M. Koinuma;S. Hayami
由硫酸根离子填充的氧化石墨烯（GO）壁通道表现出优化的质子传导率，其高于所有其他形式的GO的质子传导率。硫酸根离子增加了GO的吸水能力和氢键重组过程。
Graphene oxide (GO) walled channels filled by sulfate ions exhibit an optimized proton conductivity, which is higher than the proton conductivity of all other forms of GO. The sulphate ion increases the water absorbing capacity and hydrogen bond reformation process in GO.