A Fringe Field Shaping CMOS Capacitive Imaging Array
A Fringe Field Shaping CMOS Capacitive Imaging Array
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DOI：
10.1109/sensors47087.2021.9639495
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发表时间：
2021-10
期刊：
影响因子：
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通讯作者：
Kangping Hu;Christopher E. Arcadia;J. Rosenstein
中科院分区：
文献类型：
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作者：
Kangping Hu;Christopher E. Arcadia;J. Rosenstein
虽然经典的电化学阻抗谱（EIS）侧重于从单个工作电极进行测量，但密集的有源微电极阵列为新的传感模式提供了机会。在这里，我们提出的实验结果与集成的传感器阵列的电化学成像。该系统使用10 µm × 10 µm像素的100 × 100定制CMOS电极阵列，可测量频率高达100 MHz的阻抗。传感器芯片经过独特设计，可利用附近像素组之间的静电耦合来重新塑造局部电场。多个偏置电压和时钟相位创建了新型的信号多样性，这将使计算成像和阻抗断层扫描的增强感测模式成为可能。
While classical electrochemical impedance spectroscopy (EIS) focuses on measurements from a single working electrode, dense active microelectrode arrays offer opportunities for new modes of sensing. Here we present experimental results with an integrated sensor array for electrochemical imaging. The system uses a 100 × 100 custom CMOS electrode array with 10 µm × 10 µm pixels, which measures impedance at frequencies up to 100 MHz. The sensor chip is uniquely designed to take advantage of the electrostatic coupling between groups of nearby pixels to re-shape the local electric field. Multiple bias voltages and clock phases create new types of signal diversity that will enable enhanced sensing modes for computational imaging and impedance tomography.